期刊
JOURNAL OF APPLIED PHYSICS
卷 124, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5059560
关键词
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资金
- National Science Foundation (NSF) through the Center for Dynamics and Control of Materials: an NSF MRSEC [DMR-1720595]
- Air Force Office of Scientific Research (AFOSR) [FA9550-18-1-0053]
The EuO/SrTiO3 heterojunction is a promising combination of a ferromagnetic material and a two-dimensional electron system. We explore the deposition of Eu metal on SrTiO3/Si pseudo-substrates, with varying SrTiO3 (STO) thickness, under ultrahigh vacuum conditions. By varying the thickness of the STO layer (2-10 nm) and the deposition temperature (20-300 degrees C), we investigate the process by which oxygen is scavenged from STO by Eu. In situ x-ray photoelectron spectroscopy is used to investigate the electronic structure of the nominal Eu/STO/Si stack. We find that as a result of Eu deposition, epitaxial EuO is formed on thick STO (6-10 nm), leaving behind a highly oxygen-deficient SrTiO3-delta layer of similar to 4 nm in thickness. However, if the thickness of the STO layer is comparable to or less than the scavenging depth, the crystal structure of STO is disrupted and a solid state reaction between Eu, Si, and STO occurs when the deposition is done at a high temperature (300 degrees C). On the other hand, at a low temperature (20 degrees C), only a 1-2 nm-thick EuO interlayer is grown, on top of which the Eu metal appears to be stable. This study elucidates the growth process under different conditions and provides a better understanding and control of this system. Published by AIP Publishing.
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