期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 772, 期 -, 页码 900-904出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.09.181
关键词
Resistive switching characteristics; NiO; Graphene electrode: highly ordered pyrolytic graphite substrate
资金
- National Research Foundation of Korea (NRF) - Korea government [2015R1A2A2A05027951]
Polycrystalline NiO thin films were deposited on single crystalline HOPG substrates via radio frequency sputtering. On the HOPG substrate, the NiO thin film exhibited (111) and (222) X-ray diffraction peaks, thereby indicating that the film was polycrystalline. The graphene/NiO/HOPG RRAM capacitor showed canonical RRAM behavior, which was confirmed by evaluating the electrical properties of RRAM switching curves, writing endurance tests, retention tests, and SET and RESET voltages as a function of switching cycles. In particular, the graphene/NiO/HOPG RRAM capacitor exhibited lower SET and RESET voltages than the Pt/NiO/Pt RRAM capacitor, resulting from of the low work function of graphene and HOPG electrodes. In addition, it was possible to reduce the dispersion of the LRS and HRS states and the SET and RESET voltages for repeated switching cycles. It was suggested that this small dispersion was influenced by the simple configuration of the conducting filaments as well as the low interface roughness values of the graphene/NiO/HOPG capacitor. (C) 2018 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据