期刊
PHOTONIC SENSORS
卷 5, 期 2, 页码 152-158出版社
SPRINGEROPEN
DOI: 10.1007/s13320-015-0241-4
关键词
Silicon devices; selenium dopant; photodiodes; photovoltaic properties
In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that of photoresistors. The photosensitivity and detectivity were up to 2.85x10(-16) W.Hz(1/2) and 2.1x10(11) cm.Hz(1/2)W(1), respectively.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据