期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 17, 期 6, 页码 1299-1302出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2018.2868712
关键词
Atomic force microscopy (AFM); bending test; silicon nanowires (NWs); single crystal reactive etching and metallization (SCREAM)
类别
资金
- Tubitak [112E058]
- Koc University-Istanbul Rotary Club Fundamental Research Seed Fund Program
- Swiss Government Excellence Scholarship
- European Union [307338-NaMic]
- Swiss National Science Foundation [205320_152675]
- Swiss National Science Foundation (SNF) [205320_152675] Funding Source: Swiss National Science Foundation (SNF)
A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu m is demonstrated with a future prospect for 50 mu m opening up new possibilities for the deterministic integration of nanowires with microsystems. Nanowires with in-plane dimensions as low as 20 nm and aspect ratios up to 150 are obtained. Nanomechanical characterization through bending tests further confirms structural integrity of the connection between nanowires and anchoring Si microstructures.
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