期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 12, 页码 5434-5439出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2872170
关键词
2-D numerical simulation; junction barrier Schottky (JBS) diode; low carrier lifetime control (LCLC); single-event burnout (SEB)
资金
- National Natural Science Foundation of China [61774052]
- Excellent Youth Foundation of Zhejiang Province of China [LR17F040001]
This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based on an 1800-V JBS structure and find that the most sensitive ion's strike position is the middle of junction spacing because of the punchthrough of the electric field at anode contact. Then, the SEB hardening mechanism of LCLC is studied in this paper that the double-sided peak electric field can be effectively improved which results in a significantly decrease of maximal temperature. For the incident particlewith different linear energy transfer values, we find that the SEB threshold voltage can be substantially enhanced when the carrier lifetime (tau) is under a certain value. In addition, the basic characteristics with LCLC are discussed that the forward and reversed characteristics are hardly affected.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据