期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 30, 期 22, 页码 1933-1936出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2018.2872963
关键词
Relative intensity noise; frequency noise; semiconductor laser; self-injection locking; optical resonators; whispering gallery mode resonators
资金
- NAVY SBIR [N00178-17-C-1120]
We demonstrate a high-spectral-purity self-injection locked distributed-feedback semiconductor laser with relative intensity noise approaching -143 dB/Hz at 1 kHz and -160 dB/Hz at 100-kHz frequency offset. The frequency noise of the laser is 2 Hz/Hz(1/2) at 1 kHz and 1 Hz/Hz(1/2) at 100-kHz frequency offset. The fiber-pigtailed output power exceeds 70 mW. The low-intensity-noise performance is achieved due to the utilization of a low-noise current source feeding the laser chip and a saturated semiconductor optical amplifier reducing the technical amplitude noise of the laser. Reduction in the laser frequency noise results from the self-injection locking of the laser chip via a high-quality-factor whispering-gallery-mode resonator. The laser linewidth is less than 100 Hz.
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