4.6 Article

A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ . K2 in 65-nm CMOS

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 53, 期 12, 页码 3356-3367

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2018.2871622

关键词

Area-efficient; CMOS temperature sensor; energy-efficient; frequency-locked loop (FLL); poly-phase filter (PPF); resistor-based sensor; trimming; zero-crossing (ZC) detection

资金

  1. SK Hynix
  2. National Research Foundation of Korea (NRF) - Korean Government (NRF-2016-Global Ph.D. Fellowship Program)
  3. National Research Foundation of Korea [2016H1A2A1909844] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 mu m(2). It can operate from supply voltages as low as 0.85 V and consumes 68 mu W. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of +/- 0.12 degrees C (3 sigma) from -40 degrees C to 85 degrees C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ.K-2.

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