期刊
DIAMOND AND RELATED MATERIALS
卷 91, 期 -, 页码 219-224出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2018.11.019
关键词
MOS interface; NO2 p-type doping; Conductance method; Diamond
类别
资金
- JSPS [24360124, 15H03977]
- Grants-in-Aid for Scientific Research [15H03977] Funding Source: KAKEN
The interface properties of Al2O3/hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor (MOS) structures both with and without NO2 p-type doping were studied by measuring the capacitance-voltage (C-V) and conductance-frequency (G-f) characteristics to investigate the effect of NO2 p-type doping at the Al2O3/H-diamond interface. The interface state density was studied by measuring the conductance as a function of frequency and applied voltage. Interface state density (Do) values are for NO2 p-doped MOS structure varied from-5.7 x 10(12) cm(-2) eV(-1) at 0.27 eV above the valence band maximum (VBM) to 1.75 x 10(12) cm(-2) eV(-1) at 0.36 eV above VBM. Conversely, MOS structure without NO2 p-type doping exhibits a Do value of approximately 4.2 x 10(12) cm(-2) eV(-1) within an energy range of 0.27 to 0.39 eV. In addition, border trap density in the Al2O3 layer near the interface is also discussed.
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