期刊
CURRENT NANOSCIENCE
卷 15, 期 5, 页码 471-480出版社
BENTHAM SCIENCE PUBL LTD
DOI: 10.2174/1573413714666181009125058
关键词
CNTFETs; modeling; temperature effects; analogue circuits; digital circuits; CAD; verilog-A
类别
资金
- Ministry of Education and Scientific Research, Italy, under grants FRA 2013 - Politecnico di Bari, Italy
In this paper, we review a procedure to study the effects of temperature in the design of A/D circuits based on CNTFETs. At first, we briefly describe a compact model, already proposed by us, in which the temperature variation in the drain current equation and in energy band gap is considered. Then, the effects of temperature variations in the design of analog circuits, such as a cascode current sink mirror and an Operational Transconductance Amplifier (OTA), and in the design of digital circuits including in particular NAND and NOR logic gates, are illustrated and widely discussed.
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