4.8 Article

Photovoltaic Effect in Indium(I) Iodide Thin Films

期刊

CHEMISTRY OF MATERIALS
卷 30, 期 22, 页码 8226-8232

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.8b03593

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资金

  1. Office of Energy Efficiency and Renewable Energy (EERE), U.S. Department of Energy [DE-EE0006712]
  2. Fitzpatrick Institute for Photonics John T. Chambers Scholarship
  3. NSERC Discovery Grants program [RGPIN 04809-2014]
  4. Canada Foundation for Innovation (CFI)
  5. National Science Foundation as part of the National Nanotechnology Coordinated Infrastructure (NNCI) [ECCS-1542015]

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Halide semiconductors are undergoing a period of intense interest, buoyed by the outstanding optoelectronic properties of hybrid perovskites. It is worthwhile to consider whether related materials sharing unique aspects of the perovskite chemistry, such as the incorporation of metals that provide lone pair s electrons when integrated within the halide lattice, might yield semiconductors with comparable properties. One such metal that has not been widely studied in the context of photovoltaics is monovalent indium. In this work, we investigate a method of depositing films of indium(I) iodide, coupled with optoelectronic characterization and incorporation of these films into thin-film solar cells. We find that, although indium(I) iodide exhibits a photovoltaic effect, it is likely to be compromised by difficult-to-remove defects, e.g., iodine vacancies, which are expected to introduce recombination centers deep within the band gap.

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