4.7 Article

High dielectric permittivity and electrostrictive strain in a wide temperature range in relaxor ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3-PbTiO3]-xBa(Zn1/3Nb2/3)O3 solid solutions

期刊

CERAMICS INTERNATIONAL
卷 45, 期 5, 页码 5518-5524

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2018.12.009

关键词

Electrostriction; Ferroelectric; Electric field-induced strain; PMN; PT; BZN

资金

  1. National Natural Science Foundation of China [51772239, 51761145024]
  2. Fundamental Research Funds for the Central Universities (XJTU)
  3. Key Scientific and Technological Innovation Team of Shannxi Province [2018TD-024]
  4. 111 Project [B14040]

向作者/读者索取更多资源

High electric field-induced strain with ultralow hysteresis, which is often generated based on electrostrictive effects in ferroelectric materials, is highly desired due to its potential applications in high-precision displacement actuators. In this paper, (1-x)[Pb(Mg1/3Nb2/3)O-3-PbTiO3]-xBa(Zn-1/3 Nb-2/3)O-3 [(1-x)(PMN-PT)-xBZN] ceramics were fabricated by a solid-state reaction method. The effect of Ba(Zn1/3Nb2/3)O-3 (BZN) content on dielectric and electrostrictive properties in relaxor ferroelectric PMN-PT solid solutions was investigated in detail by dielectric spectra, polarization-electric field (P-E) hysteresis loops and strain-electric field (S-E) curves. With an increasing BZN content, the temperature stability of the dielectric permittivity of (1-x)(PMN-PT)-xBZN is improved due to the formation of two coexistent phases. A high electrostrictive strain (similar to 0.17% at 60 kV/cm) with an ultralow hysteresis ( < 10%) characteristic is obtained in a composition where x = 0.1725. The strain versus polarization (S-P) curves measured from 30 degrees C to 130 degrees C can be well fitted based on a quadratic relation, suggesting the dominating role of the electrostrictive effect. The longitudinal electrostrictive coefficient Q(33) for this system ranges from 0.0254 m(4)/C-2 to 0.0318 m(4)/C-2. Our results suggest that (1-x)(PMN-PT)-xBZN ferroelectric ceramics are potential candidates for applications in capacitors and high-precision displacement actuators.

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