期刊
CERAMICS INTERNATIONAL
卷 45, 期 4, 页码 4392-4397出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2018.11.114
关键词
SnO2; Nanobelt; Nanowire; Li-doped ZnO; High-temperature high-pressure method; Light-emitting diode
资金
- National Natural Science Foundation of China [10874178, 11074093, 61205038, 11464035, 11274135]
- Specialized Research Fund for the Doctoral Program of Higher Education [20130061130011]
- Ph.D. Programs Foundation of Ministry of Education of China [20120061120011]
- Natural Science Foundation of Jilin Province [201115013]
- Science and Technology Development Project of Jilin Province [20170101142JC, 20140101052JC]
- China Postdoctoral Science Foundation [2017M611287]
- Scientific and Technological 13th Five Year Plan Project of Jilin Provincial Department of Education [JJKH20170610KJ]
- High Performance Computing Center of Jilin University, China
We report an ultraviolet (UV) electroluminescence (EL) in n-SnO2/p-ZnO heterojunction light-emitting diodes with the nanostructural SnO2 as an n-type layer and the Li-doped ZnO (ZnO:Li) synthesized by high-temperature high-pressure (HTHP) method as a high hole concentration p-type layer. Two kinds of SnO2 nanostructures including nanobelts (NBs) and nanowires (NWs) were used to fabricate n-type layers in the heterojunctions. The two heterojunctions with different SnO2 nanostructures demonstrate different light-emission feature in EL measurements. The SnO2 NBs/p-ZnO heterojunction shows a blue emission band centered at 416 nm under forward-bias voltage. A strong UV emission peak located at 391 nm was observed for the SnO2 NWs/p-ZnO heterojunction. Photoluminescence (PL) spectra indicate that the difference in EL is attributed to morphology-dependent light-emission feature in nanostructural SnO2 layer. Our results suggest that the nanostructural SnO2/ZnO:Li heterojunction is a potential and promising system in the UV optoelectronic field.
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