4.8 Article

Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films

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SCIENCE ADVANCES
卷 1, 期 10, 页码 -

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AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.1500797

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资金

  1. FAME
  2. Microelectronics Advanced Research Corp
  3. Defense Advanced Research Projects Agency
  4. U.S. Army Research Office [W911-NF-09-1-0398, W911NF-14-1-0379, W911-NF-11-1-0232]
  5. Office of Naval Research [N00014-12-1-0976]
  6. Elings Prize Fellowship of the California Nanosystems Institute at University of California, Santa Barbara (UCSB)
  7. Materials Research Science and Engineering Centers Program of the NSF [DMR-1121053]
  8. National Nanotechnology Infrastructure Network
  9. UCSB Nanofabrication Facility, NSF

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Resistances that exceed the Mott-Ioffe-Regel limit (known as bad metal behavior) and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. We establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype bandwidth-controlled metalinsulator transition. We show that resistance saturation is determined by the magnitude of Ni e(g) orbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to a non-Fermi liquid metal phase and provide a predictive criterion for Anderson localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices.

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