相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2-x thin films deposited at room temperature
Muhammad Ismail et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2018)
Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory
Muhammad Ismail et al.
CURRENT APPLIED PHYSICS (2018)
Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application
Qing Luo et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications
Aize Hao et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2018)
Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode
Lei Hu et al.
APPLIED PHYSICS LETTERS (2018)
Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory
Yichuan Wang et al.
APPLIED PHYSICS LETTERS (2018)
3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications
Gina C. Adam et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
Guangdong Zhou et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2017)
The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system
Jung Ho Yoon et al.
NANOSCALE (2017)
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material
Anwar Manzoor Rana et al.
SCIENTIFIC REPORTS (2017)
Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material
Writam Banerjee et al.
ACS OMEGA (2017)
Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant
M. Ismail et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
Tsung-Ling Tsai et al.
APPLIED PHYSICS LETTERS (2016)
Resistive switching characteristics in manganese oxide and tantalum oxide devices
Quanli Hu et al.
MICROELECTRONIC ENGINEERING (2016)
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
Yi-Ting Tseng et al.
APPLIED PHYSICS LETTERS (2015)
Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications
Muhammad Ismail et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2015)
Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices
Muhammad Ismail et al.
JOURNAL OF APPLIED PHYSICS (2015)
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
Chun-Yang Huang et al.
APPLIED PHYSICS LETTERS (2014)
Effect of oxide/oxide interface on polarity dependent resistive switching behavior in ZnO/ZrO2 heterostructures
Zedong Xu et al.
APPLIED PHYSICS LETTERS (2014)
Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory
Baiwen Zeng et al.
JOURNAL OF APPLIED PHYSICS (2014)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)
Forming-free bipolar resistive switching in nonstoichiometric ceria films
Muhammad Ismail et al.
NANOSCALE RESEARCH LETTERS (2014)
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
S. Balatti et al.
ADVANCED MATERIALS (2013)
Bipolar resistive switching characteristics in CuO/ZnO bilayer structure
F. Yang et al.
JOURNAL OF APPLIED PHYSICS (2013)
Hydrothermal synthesis and room-temperature ferromagnetism of CeO2 nanocolumns
Fanming Meng et al.
MATERIALS LETTERS (2013)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
Joonmyoung Lee et al.
APPLIED PHYSICS LETTERS (2010)
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
Sheng-Yu Wang et al.
NANOTECHNOLOGY (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)
Ce 3d XPS investigation of cerium oxides and mixed cerium oxide (CexTiyOz)
Eric Beche et al.
SURFACE AND INTERFACE ANALYSIS (2008)
Cerium oxide nanocrystals for nonvolatile memory applications
Shao-Ming Yang et al.
APPLIED PHYSICS LETTERS (2007)
Mesoporous thin films of high-surface-area crystalline cerium dioxide
M Lundberg et al.
MICROPOROUS AND MESOPOROUS MATERIALS (2002)