Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM

We developed an intensity-modulated light-emitting device (LED) by integrating a p-GaN/n-ZnO heterojunction with multilevel resistive random access memory (RRAM). In this device, the luminous intensity of LED can be adjusted through regulating the injection current according to the variable resistance state of RRAM. As one critical foundation of device fabrication, uniform operation of multilevel RRAM was achieved by inserting carbon quantum dots into HfO2-x RRAM as a localelectric-field regulator. Eventually, the reversible regulation of electroluminescence intensity was demonstrated by tuning the compliance current in the modulated LED. Thanks to the simple structure and nanoscale switching region, this modulated LED may offer a feasible method to replace traditional thin film transistors or CMOSs with complicated structures and techniques, enabling the potential application of low-cost and high-density LED displays. Published by AIP Publishing.