期刊
APPLIED PHYSICS EXPRESS
卷 12, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/aaf5c4
关键词
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资金
- Council for Science, Technology and Innovation (CSTI) under the Cross-Ministerial Strategic Innovation Promotion Program (SIP)
- JSPS KAKENHI [18J12689]
- Grants-in-Aid for Scientific Research [18J12689] Funding Source: KAKEN
This paper reports the piezoresistive performance of the two-dimensional (2D) material of vanadium (V)-doped molybdenum disulfide (MoS2) films based on sulfurization of sputtered Mo thin films. I-V characteristics indicate that V atom doping indeed decreases the resistivity of MoS2. Strain sensors based on V-doped MoS2 resistive elements were fabricated. By using a four-point bending method, a gauge factor (GF) of 140 under compressive and tensile strain conditions was obtained. The piezoresistive effect of V-doped MoS2 with different V sputtering conditions was also investigated. The doping method introducing V atoms as dopants is found to play an important role in enhancing piezoresistive performance. (C) 2019 The Japan Society of Applied Physics
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