Nanosecond pulse laser preparation of InZnO (IZO) nanoparticles NPs for high-performance photodetector

Indium-doped zinc oxide (IZO) nanoparticles (NPs) have been deposited onto the Si substrates for the high performance of the photodetector. Here, a two-step laser ablation in liquid technique has been successfully developed to generate both ZnO NPs and IZO NPs using a nanosecond pulsed Nd:YAG laser in liquid. Microstructure and electrical properties of ZnO and IZO NPs were investigated. The SEM images exhibit changes in the morphology of the particles from hierarchical nanostructures with cauliflower-like structures in ZnO (0% indium) to rod-like structures after doping it with 32% indium. The electrical characteristic of the photodetector shows a remarkable improvement of rectification ratio with an ideality factor which is altered from 13.12 to 2.2. This improvement is associated with indium (In) concentration. The impact of indium (In) doping on the photodetector responsivity was also investigated.