Optimization of highly efficient GaAs-silicon hybrid solar cell

Optimizing the physical and chemical properties of each material in the solar cell is an efficient way to improve their performance. In the present work, we propose a double layer absorber made of high and low bandgap materials such as gallium arsenide (GaAs) and silicon (Si) along with the window layer made of zinc oxide (ZnO) and buffer layer made of cadmium sulfide (CdS) material. The solar cell structure is numerically optimized for several parameters like thickness of different layers, doping concentration, and operating temperature. Results showed that the open-circuit voltage (V-oc), short-circuit current density (J(sc)), fill factor (FF), and efficiency (?) are greatly improved against respective changes in the performance parameters. Eventually, a comparison has been made with previously reported solar cells, which proves that our suggested model exhibit high values of V-oc=0.776V, J(sc)=38.46mA/cm(2), FF=85.49%, and ? = 25.53%, respectively, with almost flat and near unity response for quantum efficiency. This indicates that the proposed design shows promise as a feasible choice for replacing less efficient conventional solar cells.