Organic WORM memory with carbon nanoparticle/epoxy active layer

Following the All With One (AW1) technology proposed in our earlier work, the present study is focused on the production and the characterization of write once read many (WORM) memory devices with a carbon nanoparticle/ epoxy resin nanocomposite, where the main advantage stands on the ease of production of the nanostructured phase. The results revealed that short 100-ns, low-voltage (5.0-V) electric pulses are enough to record a bit, and the bit one to bit zero current state ratio I ON / I OFF reaches 10(7).