期刊
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 57, 期 51, 页码 16882-16887出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201811632
关键词
atomic layer deposition; doping; photoanodes; vacancy; Zn10In16S34
资金
- National Natural Science Foundation of China [51772197, 91750112, 51422206, 51372159, 51872191, 51502184]
- 333 High-level Talents Cultivation Project of Jiangsu Province
- 1000 Youth Talents Plan
- Key University Science Research Project of Jiangsu Province [17KJA430013]
- Six Talents Peak Project of Jiangsu Province
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
The facile hydrothermal synthesis of Zn10In16S34 atomically thin nanosheet arrays on fluorine-doped tin oxide glass (FTO) substrates is presented. Through controlling heat treatment in air, O-doping and Zn, S vacancies were simultaneously introduced in Zn10In16S34 nanosheets with adjusted phase, morphology, chemical compositions, and energy level distribution. The surface defect states are passivated by depositing ultrathin Al2O3 film by atomic layer deposition technology. The performance of Zn10In16S34 photoanodes is largely improved, with 4.7 times higher current density and reduced onset potential. The experimental results and density functional theory calculations indicate that the enhancement is attributed to the fast photoexcited electron-hole pair separation, decreased surface transfer impedance, prolonged carrier lifetime, and reduced overpotential of oxygen evolution reaction.
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