期刊
ADVANCED MATERIALS
卷 31, 期 2, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201804422
关键词
Ag; field-effect transistors; graphene; molybdenum disulfide; transition metal dichalcogenides
类别
资金
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2017M3D1A1040828]
- Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2016M3A7B4909942]
- National Research Foundation of Korea (NRF) through the government of Korea (MSIP) [2016R1A4A1012929]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2015R1D1A1A01058982]
- Korea Electric Power Corporation
- National Research Foundation of Korea [2015R1D1A1A01058982, 2016R1A4A1012929] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post-silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high-performance devices while adapting for large-area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS2 devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD-grown MoS2 film and a Ag electrode as an interfacial layer. The MoS2 field-effect transistors with graphene/Ag contacts show improved electrical and photoelectrical properties, achieving a field-effect mobility of 35 cm(2) V-1 s(-1), an on/off current ratio of 4 x 10(8), and a photoresponsivity of 2160 A W-1, compared to those of devices with conventional Ti/Au contacts. These improvements are attributed to the low work function of Ag and the tunability of graphene Fermi level; the n-doping of Ag in graphene decreases its Fermi level, thereby reducing the Schottky barrier height and contact resistance between the MoS2 and electrodes. This demonstration of contact interface engineering with CVD-grown MoS2 and graphene is a key step toward the practical application of atomically thin TMDC-based devices with low-resistance contacts for high-performance large-area electronics and optoelectronics.
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