期刊
ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 3, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201805491
关键词
graphene; InSe; quantum Hall effect
类别
资金
- Engineering and Physical Sciences Research Council [EP/M012700/1, EP/N01085X/1]
- European Magnetic Field Laboratory (EMFL)
- European Research Council (ERC) under the European Union [696656]
- University of Nottingham
- National Academy of Sciences of Ukraine
- Leverhulme Trust [RF-2017-224]
- Royal Society [IE160395]
- Chinese Academy of Sciences
- Russian Science Foundation [17-12-01393]
- EPSRC [EP/N01085X/1, EP/M012700/1, EP/K005014/1] Funding Source: UKRI
The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Among van der Waals semiconductors, an exciting and rapidly growing development involves the post-transition metal chalcogenide InSe. Here, field effect phototransistors are reported where single layer graphene is capped with n-type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. It is shown that the light-induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate-controllable and only weakly dependent on temperature. The charge transfer at the InSe/graphene interface is probed by Hall effect and photoconductivity measurmentes and it is demonstrated that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light-induced charge transfer in gate-tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.
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