期刊
ACS NANO
卷 12, 期 11, 页码 11161-11168出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b05628
关键词
two-dimensional materials; two-dimensional semiconductors; MoSe2; epitaxial growth; h-BN substrates
类别
资金
- NFFA-Europe Infrastructure under Horizon 2020 EU Funding Program [121]
- European Research Council [240076]
- European Union's Horizon 2020 research and innovation programme [696656, 785219]
- Swiss National Science Foundation [200021-162612]
- Swiss National Supercomputing Centre (CSCS) [s832]
Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe2 on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe2/h-BN layer system can be transferred from the growth substrate onto SiO2. The valence band structure of ML MoSe2/h-BN/Rh(111) revealed by photoemission electron momentum microscopy (kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level (E-F), whereas the energy difference between K and Gamma points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe2, are well preserved in MoSe2/h-BN heterostructures.
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