期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 4, 页码 4278-4287出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b19836
关键词
GeSe nanosheets; liquid-phase exfoliation; carrier dynamics; photoelectrochemical; photodetector
资金
- National Natural Science Foundation of China [61435010]
- Science and Technology Planning Project of Guangdong Province [2016B050501005]
- Science and Technology Innovation Commission of Shenzhen [KQTD2015032416270385]
- Student Innovation Development Foundation of Shenzhen University [PIDFP-ZR2017002]
- Science and Technology Development Fund [007/2017/A1]
- Macao SAR, China
Owing to the attractive energy band properties, a black phosphorus (BP)-analogue semiconductor, germanium selenide (GeSe), shows a promising potential applied for optoelectronic devices. Herein, ultrathin GeSe nanosheets were systematically prepared via a facile liquid-phase exfoliation approach, with controllable nanoscale thickness. Different from BP, ultrathin GeSe nanosheets exhibit good stability under both liquid and ambient conditions. Besides, its ultrafast carrier dynamics was probed by transient absorption spectroscopy. We showed that the GeSe nanosheet-based photodetector exhibits excellent photoresponse behaviors ranging from ultraviolet (UV) to the visible regime, with high responsivity and low dark current. Furthermore, the detective ability of such a device can be effectively modulated by varying the applied bias potential, light intensity, and concentration of the electrolyte. Generally, our present contribution could not only supply fundamental knowledge of a GeSe nanosheet-based photoelectrochemical (PEC)-type device, but also offer guidance to extend other possible semiconductor materials in the application of the PEC-type photodetector.
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