期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 47, 页码 40661-40671出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b15962
关键词
cesium lead halide perovskite; thin films; vapor deposition; amplified spontaneous emission; long-term stability
资金
- National Natural Science Foundation of China [61505161, 11574248, 61875161]
- National Key R&D Program of China [2016YFB0400702]
- China Postdoctoral Science Foundation [2016M590947]
- Fundamental Research Funds for the Central Universities [xjj2016031]
- Natural Science Basic Research Plan of Shaanxi Province [2017JM6064]
- Scientific Research Plan Projects of Shaanxi Education Department [17JK0700]
Inorganic cesium lead halide perovskite has been successfully applied in the optoelectronic field due to its remarkable optical gain properties. Unfortunately, conventional solution-processed CsPbX3 films suffer unavoidable pinhole defects and poor surface morphology, severely limiting their performance on amplified spontaneous emission (ASE) and lasing applications. Herein, a dual source thermal evaporation approach is explored to achieve a uniform and high-coverage CsPbX3 polycrystalline thin film. It was found that one-step co-evaporated CsPbBr3 (OC-CsPbBr3) thin films without post-annealing exhibit an ultralow ASE threshold of similar to 3.3 mu J/cm(2) and a gain coefficient above 300 cm(-1). The coexistence of cubic and orthorhombic phases in these materials naturally form an energy cascade for the exciton transfer process, which enables rapid accumulation of excitons. Stable ASE intensity without degradation for at least 7 h is also realized from OC-CsPbBr3 thin films under continuous excitation, which is superior to that in the solution-processed CsPbBr3 thin films. Notably, a Fabry-Perot cavity laser based on the OC-CsPbBr3 thin film is first achieved, featuring an ultralow lasing threshold (1.7 mu J/cm(2)) and directional output (a beam divergence of similar to 3.8 degrees). This work highlights the noteworthy optical properties of OC-CsPbBr3 thin films, leading to potential available applications in integrated optoelectronic chips.
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