期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 47, 页码 40672-40680出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b13140
关键词
transfer stamping; complementary inverter; electrolyte-gated transistor; ionogel; low-voltage operation
资金
- Inha University [INHA-54739]
Organic/inorganic hybrid complementary inverters operating at low voltages (1 V or less) were fabricated by transfer-stamping organic p-type poly(3-hexylthiophene) (P3HT) and inorganic n-type zinc oxide (ZnO) electrolyte-gated transistors (EGTs). A semicrystalline homopolymer-based gel electrolyte, or an ionogel, was also transfer-stamped on the semiconductors for use as a high-capacitance gate insulator. For the ionogel stamping, the thermoreversible crystallization of phase-separated homopolymer crystals, which act as network cross-links, was employed to improve the contact between the gel and the semiconductor channel. The homopolymer ionogel-gated P3HT transistor exhibited a high hole mobility of 2.81 cm(2)/(V s), and the ionogel-gated n-type ZnO transistors also showed a high electron mobility of 2.06 cm(2)/(V s). The transfer-stamped hybrid complementary inverter based on the P3HT and ZnO EGTs showed a low-voltage operation with appropriate inversion characteristics including a high voltage gain of similar to 18. These results demonstrate that the transfer-stamping strategy provides a facile and reliable processing route for fabricating electrolyte-gated transistors and logic circuits.
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