期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 44, 页码 38166-38172出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b10396
关键词
2D layered materials; SnS; 2D/3D heterojunction; photodetectors; pulsed-laser deposition; multicolor photodetection
资金
- National Basic Research Program of China [2014CB931700]
- State Key Laboratory of Optoelectronic Materials and Technologies
In this work, a p-type 2D SnS nanofilm containing both laterally and vertically aligned components was successfully deposited on an n-type Si substrate through pulsed-laser deposition. Energy band analysis demonstrates a typical type-II band alignment between SnS and Si, which is beneficial to the separation of photogenerated carriers. The as-fabricated p-SnS/n-Si heterojunction photo-detector exhibits multicolor photoresponse from ultraviolet to near-infrared (370-1064 nm). Importantly, the device manifests a high responsivity of 273 A/W, a large external quantum efficiency of 4.2 X 10(4)%, and an outstanding detectivity of 7 X 10(13) Jones (1 Jones = 1 cm Hz(1/2) W-1), which far outperforms state-of-the-art 2D/3D heterojunction photodetectors incorporating either laterally or vertically aligned 2D layered materials (2DLMs). The splendid performance is ascribed to lateral SnS's dangling-bond-free interface induced efficient carrier separation, vertical SnS's high-speed carrier transport, and collision ionization induced carrier multiplication. In sum, the current work depicts a unique landscape for revolutionary design and advancement of 2DLM-based heterojunction photodetectors.
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