期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 50, 页码 43291-43298出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b14076
关键词
molybdenum ditelluride; light emitting diode; quantum efficiency; tunneling effect; near-infrared
资金
- ANU Ph.D. student scholarship
- China Scholarship Council
- ANU Major Equipment Committee fund [14MEC34]
- Australian Research Council (ARC) Discovery Early Career Researcher Award (DECRA) [DE140100805]
- ARC Discovery Project [DP180103238]
Developing a high-efficiency and low-cost light source with emission wavelength transparent to silicon is an essential step toward silicon-based nanophotonic devices and micro/nano industry platforms. Here, a near-infrared monolayer MoTe2 light-emitting diode (LED) has been demonstrated and its emission wavelength is transparent to silicon. By taking advantage of the quantum tunneling effect, the device has achieved a very high external quantum efficiency (EQE) of 9.5% at 83 K, which is the highest EQE obtained from LED devices fabricated from monolayer TMDs so far. When the device is operated as a photodetector, the MoTe2 device exhibits a strong photoresponsivity at resonant wavelength 1145 nm. The low dark current of similar to 5pA and fast response time 5.06 ms are achieved due to suppression of hBN tunneling layer. Our results open a new route for the investigation of novel near-infrared silicon integrated optoelectronic devices.
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