期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 5, 页码 5232-5239出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b18329
关键词
thin film transistor; negative bias illumination stress; praseodymium doping; metal oxide; photo-response
资金
- National Basic Research Program of China [2015CB655000]
- National Natural Science Foundation of China [51502093, 51527804]
- Science and Technology Program of Guangdong Province [2016B090906002, 2017B090901006, 2017B090901055, 2017B090907016, 201704030069]
- Pearl River S&T Nova Program of Guangzhou [201610010052, 201710010066, 201806010090]
- Tip-top Scientific and Technical Innovative Youth Talents of Guangdong Special Support Program [2015TQ01C777, 2016TQ03C331]
- Fundamental Research Funds for the Central Universities [2017MS042, 2017ZD059, 2017MS008]
- Industrial Technology Research and Development Funds for Science and Technology Program of Guangzhou [201802020036]
- Natural Science Foundation of Guangdong Province [2014A030310291]
Praseodymium-doped indium zinc oxide (PrIZO) has been employed as the channel layer of thin-film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light-induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high-field-effect mobility of 26.3 cm(2)/V s, SS value of 0.28 V/decade, and I-on/I-off ratio of 10(8). X-ray photoelectron spectroscopy, microwave photoconductivity decay, and photoluminescence spectra were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据