期刊
PHYSICAL REVIEW MATERIALS
卷 2, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.2.074601
关键词
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资金
- EPSRC [EP/P005152/1]
- EPSRC [EP/P005152/1] Funding Source: UKRI
Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge, infrared modes at about 1400 and 1520 cm(-1), and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors such as In-Ga-Zn-O (IGZO).
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