期刊
ACS ENERGY LETTERS
卷 3, 期 10, 页码 2368-2375出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.8b01532
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类别
资金
- University Grants Commision (India)
- Council of Scientific & Industrial Research (India)
- Department of Science and Technology (DST Nanomission Project), Government of India [SR/NM/NS-23/2016]
- DST
The depth of surface trap states in semiconductor quantum dots (QDs) is influenced by the degree of covalency, which in turn affects the charge recombination process in hybrid donor-acceptor systems. By taking relatively ionic cadmium selenide (CdSe) QDs with shallow trap states and covalent indium phosphide (InP) QDs having deep trap states as examples, the charge-transfer dynamics are explored using viologen derivative as an electron acceptor. Light-induced electron transfer in a 1:1 stoichiometric complex of both the donor-acceptor systems occurs in a picosecond time scale. The presence of deep hole trap states in InP QDs retards the charge recombination to a submillisecond time scale, which is 7 orders of magnitude lower than that in CdSe QDs in homogeneous solutions. The immobile quenchers in the quenching sphere of InP further stabilize the electron-transfer products to seconds through charge hopping, which extends the potential of these systems for charge-transfer and transport applications in photovoltaics.
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