High-sensitive and fast response to 255 nm deep-UV light of CH3NH3PbX3 (X = Cl , Br, I) bulk crystals

Deep-UV light detection has important application in surveillance and homeland security regions. CH3NH3PbX3 (X = Cl, Br, I) materials have outstanding optical absorption and electronic transport properties suitable for obtaining excellent deep-UV photoresponse. in this work, we have grown high-quality CH3NH3PbX3 (X = Cl, Br, I) bulk crystals and used them to fabricate photodetectors. We found that they all have high-sensitive and fast-speed response to 255 nm deep-UV light. Their responsivities are 10-10(3) times higher than MgZnO and Ga2O3 detectors, and their response speeds are 10(3) times faster than Ga2O3 and ZnO detectors. These results indicate a new promising route for deep-UV detection.