2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of similar to 3.3-3.4 V, on/off current ratio of similar to 2.7 x 10(7), and ideal factor n of similar to 2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 m Omega.cm(2) and a breakdown voltage V-BR of 2.4 kV, this device achieves a power device figure-of-merit V-BR(2)/R-on of 1.5x 10(9) V-2 Omega(-1)cm(-2).