期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 2, 期 6, 页码 168-173出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2014.2346395
关键词
Gallium nitride; Schottky barrier diode; titanium nitride; microwave rectification
GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The diodes with reactively-sputtered TiN electrodes have a lower turn-on voltage compared with the diodes with Ni electrode, while the on-resistance, the reverse leakage current, and the reverse breakdown characteristics are comparable to each other. Theoretically, the SBDs with TiN electrodes can enhance the efficiency of a rectenna circuit at 2.45 GHz from 84% to 89% when the turn-on voltage decreases from 1.0 to 0.5 V.
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