期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 3, 期 6, 页码 452-456出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2015.2482123
关键词
FinFET; Schottky barrier; steep subthreshold slope; impact ionization; feedback
资金
- European Research Council [ERC-2009-AdG-246810]
Dual-independent-gate silicon FinFET has demonstrated a steep subthreshold slope (SS) when a positive feedback induced by weak impact ionization is triggered. In this paper, we study the temperature dependency of the steep SS by characterizing the fabricated device from 100 to 380 K. The measured characteristics of SS show a reduced sensitivity to temperature as compared to conventional MOSFETs. Based on the temperature-dependent characterization, we further analyze the steep-SS characteristics and propose feasible improvements for optimizing the device performance.
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