期刊
SCIENCE BULLETIN
卷 60, 期 8, 页码 806-811出版社
ELSEVIER SCIENCE BV
DOI: 10.1007/s11434-015-0774-3
关键词
Dielectric substrate; Thickness; 2-D crystal flakes; Optical contrast; Numerical aperture
资金
- National Natural Science Foundation of China [11225421, 11474277, 11434010]
SiO2/Si substrate has been widely used to support two-dimensional (2-D) crystal flakes grown by chemical vapor deposition or prepared by micromechanical cleavage. The visibility of 2-D flakes is very sensitive to the thickness of the SiO2 layer (h(SiO2)) , which can not be determined precisely after the deposit of 2-D flakes. Here, we demonstrated a simple, fast and nondestructive technique to precisely determine h(SiO2) of SiO2 films on Si substrate only by optical contrast measurement with a typical micro-Raman confocal system. Because of its small lateral resolution down to the micrometer scale, this technique can be used to access h(SiO2) on SiO2/Si substrate that has been partially covered by 2-D crystal flakes, and then further determine the layer number of the 2-D crystal flakes. This technique can be extended to other dielectric multilayer substrates and the layer-number determination of 2-D crystal flakes on those substrates.
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