期刊
CURRENT OPINION IN CHEMICAL ENGINEERING
卷 3, 期 -, 页码 51-55出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.coche.2013.11.002
关键词
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资金
- National Science Foundation [1159682]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1159682] Funding Source: National Science Foundation
ZnO and related semiconductors are alternatives to GaN-based compounds for fabrication of UV/blue light emitting diodes (LEDs). Progress in development of ZnO LEDs has been disappointing due to the difficulty of achieving robust p-type doping and the low crystal quality of heterojunctions and quantum wells. We critically review reports of p-type doping using group V impurities and summarize recent progress and prospects for further advancement of ZnO-based light emitters.
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