4.6 Article

Advances in ZnO-based materials for light emitting diodes

期刊

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.coche.2013.11.002

关键词

-

资金

  1. National Science Foundation [1159682]
  2. Div Of Electrical, Commun & Cyber Sys
  3. Directorate For Engineering [1159682] Funding Source: National Science Foundation

向作者/读者索取更多资源

ZnO and related semiconductors are alternatives to GaN-based compounds for fabrication of UV/blue light emitting diodes (LEDs). Progress in development of ZnO LEDs has been disappointing due to the difficulty of achieving robust p-type doping and the low crystal quality of heterojunctions and quantum wells. We critically review reports of p-type doping using group V impurities and summarize recent progress and prospects for further advancement of ZnO-based light emitters.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据