相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。On the feasibility of p-type Ga2O3
Alexandros Kyrtsos et al.
APPLIED PHYSICS LETTERS (2018)
Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
A. Y. Polyakov et al.
APPLIED PHYSICS LETTERS (2018)
Iron and intrinsic deep level states in Ga2O3
M. E. Ingebrigtsen et al.
APPLIED PHYSICS LETTERS (2018)
Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current
E. B. Yakimov et al.
JOURNAL OF APPLIED PHYSICS (2018)
Deep level defects in Ge-doped (010) beta-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
Esmat Farzana et al.
JOURNAL OF APPLIED PHYSICS (2018)
Compensation and persistent photocapacitance in homoepitaxial Sn-doped beta-Ga2O3
A. Y. Polyakov et al.
JOURNAL OF APPLIED PHYSICS (2018)
Defect phase diagram for doping of Ga2O3
Stephan Lany
APL MATERIALS (2018)
Opportunities and Future Directions for Ga2O3
Michael A. Mastro et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3
Linpeng Dong et al.
SCIENTIFIC REPORTS (2017)
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
Ekaterine Chikoidze et al.
MATERIALS TODAY PHYSICS (2017)
Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
Gwangseok Yang et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor
Janghyuk Kim et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z. Zhang et al.
APPLIED PHYSICS LETTERS (2016)
Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN
In-Hwan Lee et al.
JOURNAL OF APPLIED PHYSICS (2016)
Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
Andrew M. Armstrong et al.
JOURNAL OF APPLIED PHYSICS (2016)
Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
Janghyuk Kim et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2016)
Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE
D. Gogova et al.
CRYSTENGCOMM (2015)
Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance
Alexander Y. Polyakov et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D. Gogova et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides
J. B. Varley et al.
PHYSICAL REVIEW B (2012)
Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
K. Irmscher et al.
JOURNAL OF APPLIED PHYSICS (2011)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)