Epitaxial integration and properties of SrRuO3 on silicon

We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half maximum of 0.01 degrees, a resistivity at room temperature of 250 mu Omega cm, a residual resistivity ratio (rho(300) K/rho(4) K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of similar to 160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films produced directly on SrTiO3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon. (C) 2018 Author(s).