期刊
APL MATERIALS
卷 2, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4900816
关键词
-
资金
- MOE [Tier1 MOE2013-T1-2-235, Tier2 MOE2012-T2-2-049]
- National Research Foundation under NRF RF Award [NRFRF2010-07]
- A*Star SERC PSF grant [1321202101]
High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD) method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay-rise times are 0.1 s (limited by our setup), while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据