期刊
APL MATERIALS
卷 1, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4821625
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资金
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-98CH10886]
- U.S. Department of Energy (DOE) [KC-04-01-010, DE-FG02-12ER41837]
- Bundesministerium fuer Bildung und Forschung (BMBF)
- Land Berlin, Germany
Alkali-antimonide photocathodes were grown on Si(100) and studied by means of XPS and UHV-AFM to validate the growth procedure and morphology of this material. The elements were evaporated sequentially at elevated substrate temperatures (first Sb, second K, third Cs). The generated intermediate K-Sb compound itself is a photocathode and the composition of K2.4Sb is close to the favored K3Sb stoichiometry. After cesium deposition, the surface layer is cesium enriched. The determined rms roughness of 25 nm results in a roughness domination of the emittance in the photoinjector already above 3 MV/m. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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