期刊
OPTICA
卷 2, 期 7, 页码 616-622出版社
Optica Publishing Group
DOI: 10.1364/OPTICA.2.000616
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资金
- Air Force Office of Scientific Research (AFOSR) [FA9550-14-1-0138]
- Marie Curie Outgoing International Fellowship [329346]
- National Science Foundation (NSF) [DMR1120923]
- Office of Naval Research (ONR) [N00014-10-1-0942]
Transparent conducting oxides have recently gained great attention as CMOS-compatible materials for applications in nanophotonics due to their low optical loss, metal-like behavior, versatile/tailorable optical properties, and established fabrication procedures. In particular, aluminum-doped zinc oxide (AZO) is very attractive because its dielectric permittivity can be engineered over a broad range in the near-IR and IR. However, despite all these beneficial features, the slow (>100 ps) electron-hole recombination time typical of these compounds still represents a fundamental limitation impeding ultrafast optical modulation. Here we report the first epsilon-near-zero AZO thin films that simultaneously exhibit ultrafast carrier dynamics (excitation and recombination time below 1 ps) and an outstanding reflectance modulation up to 40% for very low pump fluence levels (<4 mJ/cm(2)) at a telecom wavelength of 1.3 mu m. The unique properties of the demonstrated AZO thin films are the result of a low-temperature fabrication procedure promoting deep-level defects within the film and an ultrahigh carrier concentration. (C) 2015 Optical Society of America
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