期刊
2D MATERIALS
卷 2, 期 1, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2053-1583/2/1/011001
关键词
black phosphorus; quantum oscillations; encapsulation
资金
- FAME center, one of the six STARnet centers
- DARPA
- SRC
- ONR
- CONSEPT center at UCR
- NSF/LA-SiGMA [EPS-1003897]
- NSF [DMR-1205469]
- National Science Foundation [OCI-1053575]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1205469] Funding Source: National Science Foundation
As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN(hBN) heterostructures with one-dimensional edge contacts. These transistors are stable in ambient conditions for >300 h, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 cm(2) V-1 s(-1). At low temperatures, we observe gate-tunable Shubnikov de Haas magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor similar to 2. The cyclotron mass of few-layer phosphorene (FLP) holes is determined to increase from 0.25 to 0.31 m(e) as the Fermi level moves towards the valence band edge. Our results underscore the potential of FLP as both a platform for novel 2D physics and an electronic material for semiconductor applications.
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