期刊
2D MATERIALS
卷 1, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/1/1/011006
关键词
graphene; Klein tunneling; ballistic; transistor; Dirac fermion optics
资金
- ANR-MIGRAQUEL
- EU Graphene flagship project [604391]
- French DGA
Today, the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistors in the ballistic regime give access to Klein tunneling physics and allow the realization of devices exploiting the optics-like behavior of Dirac Fermions (DFs) as in the Veselago lens or the Fabry-Perot cavity. Here we propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using non-equilibrium Green's function (NEGF) simulation.
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