期刊
IEEE MAGNETICS LETTERS
卷 3, 期 -, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMAG.2012.2188621
关键词
Spin electronics; magneto-electronics; domain wall; magnetic logic
资金
- Nanoelectronics Research Initiative INDEX Center
- Department of Energy Office of Science Graduate Fellowship Program
- National Science Foundation [ECCS-1101798]
- Singapore-MIT Alliance
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1101798] Funding Source: National Science Foundation
We present circuit simulation results of an implementation of universal logic that operates at low switching energy. Information is stored in the position of a single domain wall in a thin, short ferromagnetic wire. The gate is switched by current-driven domain wall motion, and information is read out using a magnetic tunnel junction. The inputs and outputs of the device are currents controlled by voltage clocks, making it compatible with CMOS. Using devices that operate at 100-1 mV, we simulate a shift register circuit and a full-adder circuit. The simulations show that the magnetic logic gates can operate at lower switching energy than CMOS electronics.
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