期刊
IEEE MAGNETICS LETTERS
卷 3, 期 -, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMAG.2012.2190722
关键词
Spin electronics; magnetic random access memory; magnetic tunnel junctions (MTJs)
资金
- FIRST program of JSPS
- GCOE at Tohoku University
Thermal stability factor Delta of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Delta increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.
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