4.1 Article

Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

Development of Embedded STT-MRAM for Mobile System-on-Chips

Kangho Lee et al.

IEEE TRANSACTIONS ON MAGNETICS (2011)

Article Engineering, Electrical & Electronic

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Tai Min et al.

IEEE TRANSACTIONS ON MAGNETICS (2010)

Article Chemistry, Physical

A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

S. Ikeda et al.

NATURE MATERIALS (2010)

Article Materials Science, Multidisciplinary

Spin-current interaction with a monodomain magnetic body: A model study

JZ Sun

PHYSICAL REVIEW B (2000)