期刊
IEEE MAGNETICS LETTERS
卷 2, 期 -, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMAG.2011.2155625
关键词
Spin electronics; spin-transfer torque; magnetic random-access memory (MRAM); magnetic switching
Bit error rates below 10(-11) are reported for a 4-kb magnetic random access memory chip, which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular magnetic anisotropy. Tests were performed at wafer level, and error-free operation was achieved with 10 ns write pulses for all nondefective bits during a 66-h test. Yield in the 4-kb array was limited to 99% by the presence of defective cells. Test results for both a 4-kb array and individual devices are consistent and predict practically error-free operation at room temperature.
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