期刊
IEEE MAGNETICS LETTERS
卷 1, 期 -, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMAG.2010.2052238
关键词
Spin electronics; Co/Pt multilayers; dipolar interaction; magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); perpendicular magnetic anisotropy (PMA); tunneling magnetoresistance
资金
- French National Research Agency [ANR-07-NANO-052-02]
In magnetic tunnel junctions (MTJ), synthetic antiferromagnets (SAF) are usually used as reference layer to minimize dipolar interactions induced between this layer and the free layer (FL). We show here that the use of SAF allows us to reduce the asymmetry of the FL reversal due to stray fields in nanosized MTJs with perpendicular magnetic anisotropy.
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