期刊
ACS PHOTONICS
卷 5, 期 10, 页码 4147-4155出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.8b00949
关键词
flat panel photodetector; ZnS photoconductor; ZnO nanowire field emitters; electron bombardment induced photoconductivity; high internal gain
类别
资金
- National Key Research and Development Program of China [2016YFA0202001, 2016YFA0202002]
- Science and Technology Department of Guangdong Province
- Fundamental Research Funds for the Central Universities
- Guangzhou Science Technology and Innovation Commission [201504010012, 201508020121]
Flat panel photodetectors are widely studied and implemented in large-area imaging. However, developing highly sensitive flat panel photodetectors with high internal gain is still very challenging due to material limitation where photoelectron multiplication mechanisms have to be established. In this study, we proposed to use an electron bombardment induced photoconductivity (EBIPC) mechanism to achieve high internal gain in a flat panel photodetector based on a ZnS photoconductor integrated with ZnO nanowire (NW) field emitters. The photoconductivity of the ZnS thin film increased significantly upon bombardment with electrons from the emitters, which led to an internal range. The photoresponse parameters further verified that the high gain depended on the enhanced light-responsive performance of the ZnS thin film induced by the EBIPC mechanism. The proposed EBIPC mechanism is promising for use in high gain.
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